发明授权
US06858539B2 Post-CMP treating liquid and method for manufacturing semiconductor device
有权
后CMP处理液和半导体装置的制造方法
- 专利标题： Post-CMP treating liquid and method for manufacturing semiconductor device
- 专利标题（中）： 后CMP处理液和半导体装置的制造方法
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申请号： US10330105申请日： 2002-12-30
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公开(公告)号： US06858539B2公开(公告)日： 2005-02-22
- 发明人: Gaku Minamihaba , Yukiteru Matsui , Nobuyuki Kurashima , Hiroyuki Yano
- 申请人： Gaku Minamihaba , Yukiteru Matsui , Nobuyuki Kurashima , Hiroyuki Yano
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2002-309608 20021024
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; C09G1/02 ; H01L21/02 ; H01L21/304 ; H01L21/321 ; H01L21/3213 ; H01L21/302
摘要：
There is disclosed a post-CMP treating liquid comprising water, and resin particles dispersed in the water and having a functional group at a surface thereof, or comprising water, resin particles dispersed in the water, and an additive having a functional group and incorporated in the water. The post-CMP treating liquid exhibits a polishing rate both of an insulating film and a conductive film of 10 nm/min or less.
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