发明授权
US06861679B2 Gallium indium nitride arsenide based epitaxial wafer, a hetero field effect transistor using the wafer, and a method of fabricating the hetero field effect transistor
失效
基于砷化镓铟的外延晶片,使用晶片的异质场效应晶体管,以及制造该异质场效应晶体管的方法
- 专利标题: Gallium indium nitride arsenide based epitaxial wafer, a hetero field effect transistor using the wafer, and a method of fabricating the hetero field effect transistor
- 专利标题(中): 基于砷化镓铟的外延晶片,使用晶片的异质场效应晶体管,以及制造该异质场效应晶体管的方法
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申请号: US10817035申请日: 2004-04-05
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公开(公告)号: US06861679B2公开(公告)日: 2005-03-01
- 发明人: Nobuyuki Otsuka , Koichi Mizuno , Shigeo Yoshii , Asamira Suzuki
- 申请人: Nobuyuki Otsuka , Koichi Mizuno , Shigeo Yoshii , Asamira Suzuki
- 申请人地址: JP Osaka
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JP Osaka
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP2002-313902 20021029; JP2002-318190 20021031
- 主分类号: H01L29/812
- IPC分类号: H01L29/812 ; H01L21/335 ; H01L21/338 ; H01L29/20 ; H01L29/778 ; H01L31/0328
摘要:
A hetero field effect transistor according to the present invention comprises an InP substrate, a channel layer provided on the InP substrate with a buffer layer disposed between the InP substrate and the channel layer, a spacer layer constituted by a semiconductor having a band gap larger than that of the channel layer formed to hetero-join to the channel layer, and a carrier supply layer formed to be adjacent to the spacer layer, wherein the channel layer comprises a predetermined semiconductor layer constituted by a compound semiconductor represented by a formula GaxIn1−xNyA1−y in which A is As or Sb, composition x satisfies 0≦x≦0.2, and composition y satisfies 0.03≦y≦0.10.