The present invention provides a system for stress testing an oxide structure to determine that structure's reliability in overstress conditions. The present invention provides an overstress test structure (400) that comprises a first transistor (406), having a first terminal coupled to ground, a second terminal coupled to a control signal (402), and a third terminal coupled to a first end of a first resistive element (412). A first voltage source (414) is coupled to the second end of the first resistive element. A second resistive element (416) is intercoupled between the second end of the first resistive element and ground. A second transistor (418) has a first terminal coupled to the second end of the first resistive element, a second terminal coupled to the first end of the first resistive element, and a third terminal coupled to a first node (420). A third resistive element (422) is intercoupled between the third terminal of the second transistor and ground; and a third transistor (424) has a first terminal coupled (426) to the oxide structure, a second terminal coupled to the first end of the first resistive elerment, and a third terminal coupled to a second voltage source (428).