发明授权
- 专利标题： Semiconductor memory device with surface strap and method of fabricating the same
- 专利标题（中）： 具有表面带的半导体存储器件及其制造方法
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申请号： US10644415申请日： 2003-08-20
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公开(公告)号： US06867450B2公开(公告)日： 2005-03-15
- 发明人: Masaru Kito , Ryota Katsumata , Hideaki Aochi
- 申请人： Masaru Kito , Ryota Katsumata , Hideaki Aochi
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Frommer Lawrence & Haug LLP
- 优先权： JP2003-166851 20030611
- 主分类号： H01L27/108
- IPC分类号： H01L27/108 ; H01L21/336 ; H01L21/8242 ; H01L29/76 ; H01L29/786 ; H01L31/119
摘要：
A semiconductor memory device includes memory cells each having a trench capacitor and a fin-gate-type MOSFET that selects the trench capacitor. One of activation regions of the MOSFET, which are provided in a pillar, and one of electrodes of the trench capacitor are electrically connected by a surface strap. The surface strap contacts an upper surface and an upper part of a side wall of the pillar.
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