发明授权
- 专利标题： Magnetic memory with reduced write current
- 专利标题（中）： 具有减小写入电流的磁记忆体
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申请号： US10771537申请日： 2004-02-05
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公开(公告)号： US06868002B2公开(公告)日： 2005-03-15
- 发明人: Yoshiaki Saito , Koichiro Inomata , Minoru Amano , Kentaro Nakajima , Masayuki Sagoi , Tatsuya Kishi , Shigeki Takahashi
- 申请人： Yoshiaki Saito , Koichiro Inomata , Minoru Amano , Kentaro Nakajima , Masayuki Sagoi , Tatsuya Kishi , Shigeki Takahashi
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2000-227320 20000727; JP2001-157484 20010525
- 主分类号： G11C11/14
- IPC分类号： G11C11/14 ; G11C11/15 ; H01F10/16 ; H01F10/26 ; H01F10/32 ; H01L21/8246 ; H01L27/105 ; H01L27/22 ; H01L43/08 ; G11C11/00
摘要：
There is provided a magnetic memory including first and second wirings intersecting each other and disposed apart from each other, a magnetoresistance effect film positioned between the first and second wirings, and a first magnetic film including a first portion facing the magnetoresistance effect film with the first wiring interposed therebetween and a pair of second portions positioned on both sides of the first wiring and magnetically connected to the first portion, each of the first and second portions having either one of a high saturation magnetization soft magnetic material containing cobalt and a metal-nonmetal nano-granular film.
公开/授权文献
- US20040156231A1 Magnetic memory 公开/授权日：2004-08-12