发明授权
- 专利标题： Recognition method of a mark provided on a semiconductor device
- 专利标题（中）： 提供在半导体器件上的标记的识别方法
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申请号： US10321629申请日： 2002-12-18
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公开(公告)号： US06869819B2公开(公告)日： 2005-03-22
- 发明人: Mitsuhisa Watanabe , Yoshikazu Kumagaya , Akira Takashima
- 申请人： Mitsuhisa Watanabe , Yoshikazu Kumagaya , Akira Takashima
- 申请人地址： JP Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JP Kawasaki
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 优先权： JP2002-153519 20020528
- 主分类号： H01L21/68
- IPC分类号： H01L21/68 ; G01B11/00 ; G01R31/26 ; G03F9/00 ; G06K9/00 ; H01L21/00 ; H01L21/50 ; H01L21/66 ; H01L21/683 ; H01L21/78 ; H01L21/784 ; H01L23/44 ; H01L23/544
摘要：
A high-contrast image recognition can be performed by recognizing an image of a recognition mark from a back surface of a wafer by a visible-light camera by irradiating a visible light from a circuit pattern surface of a silicon substrate. A thickness of the silicon substrate is set to 5 μm to 50 μm. A white or visible light having a wavelength equal to or less than 800 nm is irradiated onto the circuit-pattern forming surface of the substrate. A visible light that has transmitted through the silicon substrate is received by a visible-light camera on a side of a back surface of the silicon substrate. An image of a recognition mark formed on the circuit-pattern forming surface of the silicon substrate is recognized by the visible-light camera.
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