发明授权
US06875664B1 Formation of amorphous carbon ARC stack having graded transition between amorphous carbon and ARC material
失效
在无定形碳和ARC材料之间具有渐变过渡的无定形碳ARC叠层的形成
- 专利标题： Formation of amorphous carbon ARC stack having graded transition between amorphous carbon and ARC material
- 专利标题（中）： 在无定形碳和ARC材料之间具有渐变过渡的无定形碳ARC叠层的形成
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申请号： US10230794申请日： 2002-08-29
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公开(公告)号： US06875664B1公开(公告)日： 2005-04-05
- 发明人: Richard J. Huang , Srikanteswara Dakshina-Murthy , Philip A. Fisher , Cyrus E. Tabery , Lu You
- 申请人： Richard J. Huang , Srikanteswara Dakshina-Murthy , Philip A. Fisher , Cyrus E. Tabery , Lu You
- 申请人地址： US CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Foley & Lardner LLP
- 主分类号： H01L21/027
- IPC分类号： H01L21/027 ; H01L21/033 ; H01L21/28 ; H01L21/312 ; H01L21/314 ; H01L21/3213 ; H01L21/336
摘要：
A method of forming an integrated circuit using an amorphous carbon hard mask involves providing an amorphous carbon material layer above a layer of conductive material and providing an anti-reflective coating (ARC) material layer above the amorphous carbon material. A transition region is formed intermediate the amorphous carbon material layer and the ARC material layer. The transition region has a concentration profile that provides a transition between the amorphous carbon material layer and the ARC material layer. A portion of the amorphous carbon material layer, the ARC material layer, and the transition region is removed to form a hard mask, and a feature is formed in the layer of conductive material according to the hard mask.
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