发明授权
- 专利标题: Magnetoresistive element and magnetic memory unit
- 专利标题(中): 磁阻元件和磁存储器单元
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申请号: US10673025申请日: 2003-09-26
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公开(公告)号: US06879514B2公开(公告)日: 2005-04-12
- 发明人: Masanori Hosomi , Kazuhiro Bessho , Kazuhiro Ohba , Tetsuo Mizuguchi , Yutaka Higo , Takeyuki Sone , Tetsuya Yamamoto , Hiroshi Kano
- 申请人: Masanori Hosomi , Kazuhiro Bessho , Kazuhiro Ohba , Tetsuo Mizuguchi , Yutaka Higo , Takeyuki Sone , Tetsuya Yamamoto , Hiroshi Kano
- 申请人地址: JP Tokyo
- 专利权人: Sony Corporation
- 当前专利权人: Sony Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Sonnenschein, Nath & Rosenthal LLP
- 优先权: JPP2002-286560 20020930
- 主分类号: G11C11/15
- IPC分类号: G11C11/15 ; G11C11/00 ; G11C11/14 ; G11C11/16 ; H01L21/8246 ; H01L27/10 ; H01L27/105 ; H01L27/115 ; H01L43/08
摘要:
In a magnetoresistive element which includes at least a pair of ferromagnetic layers stacked with having an intermediate layer inbetween and achieves a change in the magnetic resistance by permitting a current to flow in the direction which crosses the plane of the stacked layers, by virtue of having a construction wherein at least one ferromagnetic layer constituting an information recording layer has an amorphous structure containing a CoFeB or CoFeNiB alloy and has a plane form having a longer axis in one direction wherein both sides thereof along the longer axis direction form a straight line or a curved outward, and the both ends thereof in the longer axis direction form a curved or bent outward from, wherein the pattern form has an aspect ratio of 1:1.2 to 1:3.5, excellent asteroid curve having consistency in the properties can be stably obtained.
公开/授权文献
- US20040136232A1 Magnetoresistive element and magnetic memory unit 公开/授权日:2004-07-15
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