发明授权
- 专利标题： Magnetic memory device having yoke layer
- 专利标题（中）： 具有轭层的磁存储器件
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申请号： US10926047申请日： 2004-08-26
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公开(公告)号： US06879515B2公开(公告)日： 2005-04-12
- 发明人: Hiroaki Yoda , Yoshiaki Asao , Tomomasa Ueda , Minoru Amano , Tatsuya Kishi , Keiji Hosotani , Junichi Miyamoto
- 申请人： Hiroaki Yoda , Yoshiaki Asao , Tomomasa Ueda , Minoru Amano , Tatsuya Kishi , Keiji Hosotani , Junichi Miyamoto
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2002-221877 20020730; JP2002-324105 20021107
- 主分类号： G11C11/15
- IPC分类号： G11C11/15 ; G11C11/00 ; G11C11/16 ; H01L21/00 ; H01L21/8246 ; H01L27/00 ; H01L27/105 ; H01L27/22 ; H01L29/82 ; H01L43/00 ; H01L43/08
摘要：
A magnetic memory device includes first wiring which runs in the first direction, second wiring which runs in the second direction, a magneto-resistance element which is arranged at an intersection between the first and second wirings, a first yoke main body which covers at least either of the lower surface and two side surfaces of the first wring, a second yoke main body which covers at least either of the upper surface and two side surfaces of the second wiring, first and second yoke tips which are arranged on two sides of the magneto-resistance element in the first direction at an interval from the magneto-resistance element, and third and fourth yoke tips which are arranged on two sides of the magneto-resistance element in the second direction at an interval from the magneto-resistance element.
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