发明授权
US06882045B2 Multi-chip module and method for forming and method for deplating defective capacitors
有权
多芯片模块及其形成方法以及有缺陷的电容器的剥离方法
- 专利标题: Multi-chip module and method for forming and method for deplating defective capacitors
- 专利标题(中): 多芯片模块及其形成方法以及有缺陷的电容器的剥离方法
-
申请号: US09997589申请日: 2001-11-29
-
公开(公告)号: US06882045B2公开(公告)日: 2005-04-19
- 发明人: Thomas J. Massingill , Mark Thomas McCormack , Wen-Chou Vincent Wang
- 申请人: Thomas J. Massingill , Mark Thomas McCormack , Wen-Chou Vincent Wang
- 代理机构: Sheppard Mullin Richter & Hampton LLP
- 主分类号: H01L21/48
- IPC分类号: H01L21/48 ; H05K3/00 ; H05K3/10 ; H05K3/24 ; H05K3/46 ; H01L23/34
摘要:
A method for deplating defective capacitors comprising forming a plurality of capacitors on a semiconductor substrate, forming a plurality of metal contacts on the plurality of capacitors, and depositing a layer of photoresist on the semiconductor substrate. The photoresist layer is patterned so that the plurality of metal contacts are exposed, which are then contacted with an electrically conductive solution. The metal contacts, which are disposed over defective capacitors, are subsequently deplated. A method for forming a multi-chip module comprising forming a thin-film polymeric interconnect structure having a pair of sides, one of which is disposed on a silicon substrate having active or passive devices and the other of which has a computer chip mounted thereon. A multi-chip module formed by the method.
公开/授权文献
信息查询
IPC分类: