Invention Grant
US06887341B2 Plasma processing apparatus for spatial control of dissociation and ionization
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用于解离和电离的空间控制的等离子体处理装置
- Patent Title: Plasma processing apparatus for spatial control of dissociation and ionization
- Patent Title (中): 用于解离和电离的空间控制的等离子体处理装置
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Application No.: US10291754Application Date: 2002-11-12
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Publication No.: US06887341B2Publication Date: 2005-05-03
- Inventor: Eric J. Strang , Paul Moroz , Steven T. Fink
- Applicant: Eric J. Strang , Paul Moroz , Steven T. Fink
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Pillsbury Winthrop LLP
- Main IPC: H05H1/46
- IPC: H05H1/46 ; B01J19/08 ; C23C16/50 ; C23C16/509 ; H01J37/32 ; H01L21/3065 ; H01L21/306 ; C23C16/00 ; C23C16/455 ; C23F1/00

Abstract:
A plasma processing apparatus for spatial control of dissociation and ionization and a method for controlling the dissociation and ionization in the plasma. An aspect of the present invention provides a plasma processing apparatus for spatial control of dissociation and ionization includes a process chamber, a plasma generating system configured and arranged to produce a plasma in the process chamber, a substrate holder configured to hold a substrate during substrate processing, a gas source configured to introduce gases into the process chamber, a pressure-control system for maintaining a selected pressure within the process chamber, and, a plurality of partitions dividing the internal volume of the process chamber into one or more spatial zones. These partitions extend from a wall of the process chamber toward said substrate holder.
Public/Granted literature
- US20030094238A1 Plasma processing apparatus for spatial control of dissociation and ionization Public/Granted day:2003-05-22
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