发明授权
- 专利标题： Non-volatile memory device and method for forming
- 专利标题（中）： 非易失性存储器件及其形成方法
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申请号： US10267153申请日： 2002-10-09
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公开(公告)号： US06887758B2公开(公告)日： 2005-05-03
- 发明人: Gowrishankar L. Chindalore , Paul A. Ingersoll , Craig T. Swift , Alexander B. Hoefler
- 申请人： Gowrishankar L. Chindalore , Paul A. Ingersoll , Craig T. Swift , Alexander B. Hoefler
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 代理商 Joanna G. Chiu; Daniel D. Hill
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/792 ; H01L29/788
摘要：
A semiconductor device (10) has a highly doped layer (26) having a first conductivity type uniformly implanted into the semiconductor substrate (20). An oxide-nitride-oxide structure (36, 38, 40) is formed over the semiconductor substrate (20). A halo region (46) having the first conductivity type is implanted at an angle in only a drain side of the oxide-nitride-oxide structure and extends under the oxide-nitride-oxide structure a predetermined distance from an edge of the oxide-nitride-oxide structure. A source (52) and drain (54) having a second conductivity type are implanted into the substrate (20). The resulting non-volatile memory cell provides a low natural threshold voltage to minimize threshold voltage drift during a read cycle. In addition, the use of the halo region (46) on the drain side allows a higher programming speed, and the highly doped layer (26) allows the use of a short channel device.
公开/授权文献
- US20040070030A1 Non-volatile memory device and method for forming 公开/授权日：2004-04-15
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