发明授权
US06888703B2 Multilayered structures comprising magnetic nano-oxide layers for current perpindicular to plane GMR heads
失效
包括磁性纳米氧化物层的多层结构,用于与平面GMR头垂直
- 专利标题: Multilayered structures comprising magnetic nano-oxide layers for current perpindicular to plane GMR heads
- 专利标题(中): 包括磁性纳米氧化物层的多层结构,用于与平面GMR头垂直
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申请号: US09953539申请日: 2001-09-17
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公开(公告)号: US06888703B2公开(公告)日: 2005-05-03
- 发明人: Bernard Dieny , Cheng Horng , Kochan Ju , Min Li , Simon Liao
- 申请人: Bernard Dieny , Cheng Horng , Kochan Ju , Min Li , Simon Liao
- 申请人地址: US CA Milpitas
- 专利权人: Headway Technologies, Inc.
- 当前专利权人: Headway Technologies, Inc.
- 当前专利权人地址: US CA Milpitas
- 代理商 George O. Saile; Stephen B. Ackerman
- 主分类号: G01R33/09
- IPC分类号: G01R33/09 ; G11B5/39 ; H01F10/16 ; H01F10/32 ; H01F41/14 ; H01L43/08 ; H01L43/10 ; H01L43/12
摘要:
Nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stacks are provided, together with methods for forming such stacks. Such stacks have increased resistance and enhanced magnetoresistive properties relative to CPP stacks made entirely of metallic layers. Said enhanced properties are provided by the insertion of magnetic nano-oxide layers between ferromagnetic layers and non-magnetic spacer layers, whereby said nano-oxide layers increase resistance and exhibit spin filtering properties. CPP sensor stacks of various types are provided, all having nano-oxide layers formed therein, including the spin-valve type and the synthetic antiferromagnetic pinned layer spin-valve type. Said stacks can also be formed upon each other to provide laminated stacks of different types.
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