Invention Grant
- Patent Title: Method of wafer band-edge measurement using transmission spectroscopy and a process for controlling the temperature uniformity of a wafer
- Patent Title (中): 使用透射光谱的晶片带边测量方法和用于控制晶片的温度均匀性的方法
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Application No.: US10168544Application Date: 2001-01-05
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Publication No.: US06891124B2Publication Date: 2005-05-10
- Inventor: Medona B. Denton , Wayne L. Johnson , Murray D. Sirkis
- Applicant: Medona B. Denton , Wayne L. Johnson , Murray D. Sirkis
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- International Application: PCTUS01/00003 WO 20010105
- International Announcement: WO0150109 WO 20010712
- Main IPC: G01J5/02
- IPC: G01J5/02 ; G01J5/00 ; G01K11/12 ; H01L21/00 ; H01L21/205 ; H01L21/3065 ; H01L21/66 ; B23K10/00
Abstract:
A method and system for using transmission spectroscopy to measure a temperature of a substrate (135). By passing light through a substrate, the temperature of the substrate can be determined using the band-edge characteristics of the wafer. This in-situ method and system can be used as a feedback control in combination with a variable temperature substrate holder (182) to more accurately control the processing conditions of the substrate. By utilizing a multiplicity of measurement sites the variation of the temperature across the substrate (135) can also be measured.
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