发明授权
- 专利标题: Dual gate logic device
- 专利标题(中): 双门逻辑器件
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申请号: US10448729申请日: 2003-05-30
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公开(公告)号: US06891226B2公开(公告)日: 2005-05-10
- 发明人: Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , William H. Ma
- 申请人: Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , William H. Ma
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Mark Levy & Associates
- 代理商 Lawrence R. Fraley
- 主分类号: H01L21/76
- IPC分类号: H01L21/76 ; H01L21/02 ; H01L21/28 ; H01L21/336 ; H01L21/762 ; H01L21/8234 ; H01L27/08 ; H01L27/088 ; H01L27/12 ; H01L29/78 ; H01L29/786 ; H01L29/76 ; H01L29/94 ; H01L31/062
摘要:
The present invention features double- or dual-gate logic devices that contain gate conductors that are consistently self-aligned and that have channels that are of constant width. A single-crystal silicon wafer is utilized as the channel material. Pillars or stacks of self aligned dual gate MOSFETs are generated by etching, via the juxtaposition of overlapping germanium-containing gate conductor regions. Vertically etching through regions of both gate conducting material and dielectric insulating material provides an essentially perfect, self-aligned dual gate stack.
公开/授权文献
- US20030201500A1 Dual gate logic device 公开/授权日:2003-10-30