发明授权
- 专利标题： Magneto-resistive device having soft reference layer
- 专利标题（中）： 具有软参考层的磁阻器件
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申请号： US10351013申请日： 2003-01-25
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公开(公告)号： US06891746B2公开(公告)日： 2005-05-10
- 发明人: Lung T. Tran , Manish Sharma
- 申请人： Lung T. Tran , Manish Sharma
- 申请人地址： US TX Houston
- 专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人地址： US TX Houston
- 主分类号： G11C11/15
- IPC分类号： G11C11/15 ; G11C11/16 ; H01L21/8246 ; H01L27/105 ; H01L43/08 ; G11C11/14
摘要：
A magneto-resistive device includes first and second ferromagnetic layers having different coercivities, and a spacer layer between the first and second layers. Each ferromagnetic layer has a magnetization that can be oriented in either of two directions.
公开/授权文献
- US20030137868A1 Magneto-resistive device having soft reference layer 公开/授权日：2003-07-24
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