发明授权
US06897074B1 Method for making single-phase c-axis doped PGO ferroelectric thin films
失效
制备单相c轴掺杂PGO铁电薄膜的方法
- 专利标题： Method for making single-phase c-axis doped PGO ferroelectric thin films
- 专利标题（中）： 制备单相c轴掺杂PGO铁电薄膜的方法
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申请号： US10794736申请日： 2004-03-03
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公开(公告)号： US06897074B1公开(公告)日： 2005-05-24
- 发明人: Fengyan Zhang , Wei-Wei Zhuang , Jong-Jan Lee , Sheng Teng Hsu
- 申请人： Fengyan Zhang , Wei-Wei Zhuang , Jong-Jan Lee , Sheng Teng Hsu
- 申请人地址： US WA Camas
- 专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人地址： US WA Camas
- 代理商 David C. Ripma; Matthew D. Rabdau; Joseph P. Curtin
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/02 ; H01L21/316 ; H01L41/22
摘要：
A method for forming a doped PGO ferroelectric thin film, and related doped PGO thin film structures are described. The method comprising: forming either an electrically conductive or electrically insulating substrate; forming a doped PGO film overlying the substrate; annealing; crystallizing; and, forming a single-phase c-axis doped PGO thin film overlying the substrate, having a Curie temperature of greater than 200 degrees C. Forming a doped PGO film overlying the substrate includes depositing a doped precursor in the range between 0.1N and 0.5N, with a molecular formula of Pby-xMxGe3O11, where: M is a doping element; y=4.5 to 6; and, x=0.1 to 1. The element M can be Sn, Ba, Sr, Cd, Ca, Pr, Ho, La, Sb, Zr, or Sm.
公开/授权文献
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