发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US10211705申请日： 2002-08-05
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公开(公告)号： US06897523B2公开(公告)日： 2005-05-24
- 发明人: Shuichi Ueno , Haruo Furuta , Shigehiro Kuge , Hiroshi Kato
- 申请人： Shuichi Ueno , Haruo Furuta , Shigehiro Kuge , Hiroshi Kato
- 申请人地址： JP Tokyo
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2002-035082 20020213
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/792 ; H01L29/861 ; H01L29/788 ; H01L21/336
摘要：
A semiconductor device is provided which includes a diode formed of a MISFET and having a current-voltage characteristic close to that of an ideal diode. Negatively charged particles (e.g. electrons: 8a) are trapped on the drain region (2) side of a silicon nitride film (4b) sandwiched between films of silicon oxide (4a, 4c). When a bias voltage is applied between the drain and source with the negatively charged particles (8a) thus trapped and in-channel charged particles (9a) induced by them, the MISFET exhibits different threshold values for channel formation depending on whether it is a forward bias or a reverse bias. That is to say, when a reverse bias is applied, the channel forms insufficiently and the source-drain current is less likely to flow, while the channel forms sufficiently and a large source-drain current flows when a forward bias is applied. This offers a current-voltage characteristic close to that of the ideal diode.
公开/授权文献
- US20030151086A1 Semiconductor device 公开/授权日：2003-08-14
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