Invention Grant
- Patent Title: Method for locally heating a region in a semiconductor substrate
- Patent Title (中): 局部加热半导体衬底区域的方法
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Application No.: US10612628Application Date: 2003-07-02
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Publication No.: US06900130B2Publication Date: 2005-05-31
- Inventor: Dirk Manger
- Applicant: Dirk Manger
- Applicant Address: DE Munich
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Munich
- Agent Laurence A. Greenberg; Werner H. Stemer; Ralph E. Locher
- Priority: DE10229642 20020702
- Main IPC: C23C16/04
- IPC: C23C16/04 ; H01L21/02 ; H01L21/285 ; H01L21/324 ; H01L21/326 ; H01L21/334 ; H01L21/8242 ; H01L21/44
Abstract:
A method is proposed for locally heating a region that is disposed in a substrate. A substrate is provided and at least one region is produced in the substrate with a lower specific resistance than the surrounding substrate. The region is then locally heated by inducing eddy currents by irradiation with electromagnetic energy.
Public/Granted literature
- US20040067661A1 Method for locally heating a region in a semiconductor substrate Public/Granted day:2004-04-08
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