发明授权
US06909130B2 Magnetic random access memory device having high-heat disturbance resistance and high write efficiency
失效
具有高耐热干扰性和高写入效率的磁性随机存取存储器件
- 专利标题： Magnetic random access memory device having high-heat disturbance resistance and high write efficiency
- 专利标题（中）： 具有高耐热干扰性和高写入效率的磁性随机存取存储器件
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申请号： US10704552申请日： 2003-11-12
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公开(公告)号： US06909130B2公开(公告)日： 2005-06-21
- 发明人: Hiroaki Yoda , Tomomasa Ueda , Hisanori Aikawa , Tatsuya Kishi , Takeshi Kajiyama , Yoshiaki Asao
- 申请人： Hiroaki Yoda , Tomomasa Ueda , Hisanori Aikawa , Tatsuya Kishi , Takeshi Kajiyama , Yoshiaki Asao
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2003-098407 20030401
- 主分类号： G11C11/15
- IPC分类号： G11C11/15 ; G11C11/16 ; H01L21/8246 ; H01L27/105 ; H01L27/22 ; H01L29/76 ; H01L43/08
摘要：
A recording layer of an MTJ element is constituted by using a high crystal magnetic anisotropic material. A write wiring used to write data into the MTJ element is covered with a magnetic layer, and the write wiring and the magnetic layer are exchange-coupled with each other. A sum of a magnetic volume of the magnetic layer at a part opposed to the recording layer of the MTJ element and that of the recording layer is set smaller than a magnetic volume of the magnetic layer at any other part.
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