发明授权
- 专利标题： FeTa nano-oxide layer in pinned layer for enhancement of giant magnetoresistance in bottom spin valve structures
- 专利标题（中）： FeTa纳米氧化物层，用于增强底部自旋阀结构中的巨磁阻
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申请号： US10437090申请日： 2003-05-13
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公开(公告)号： US06909583B2公开(公告)日： 2005-06-21
- 发明人: Min Li , Simon H. Liao , Masashi Sano , Kiyoshi Noguchi , Kochan Ju , Cheng T. Horng
- 申请人： Min Li , Simon H. Liao , Masashi Sano , Kiyoshi Noguchi , Kochan Ju , Cheng T. Horng
- 申请人地址： US CA Milpitas
- 专利权人： Headway Technologies, Inc.
- 当前专利权人： Headway Technologies, Inc.
- 当前专利权人地址： US CA Milpitas
- 代理商 George O'Saile; Stephen B. Ackerman
- 主分类号： G01R33/09
- IPC分类号： G01R33/09 ; G11B5/39 ; G11B5/127
摘要：
A method for forming a bottom spin valve sensor having a synthetic antiferromagnetic pinned (SyAP) layer, antiferromagnetically coupled to a pinning layer, in which one of the layers of the SyAP is formed as a three layer lamination that contains a specularly reflecting oxide layer of FeTaO. The sensor formed according to this method has an extremely high GMR ratio and exhibits good pinning strength.
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