发明授权
US06911361B2 Low temperature processing of PCMO thin film on Ir substrate for RRAM application
有权
用于RRAM应用的Ir衬底上的PCMO薄膜的低温处理
- 专利标题： Low temperature processing of PCMO thin film on Ir substrate for RRAM application
- 专利标题（中）： 用于RRAM应用的Ir衬底上的PCMO薄膜的低温处理
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申请号： US10384846申请日： 2003-03-10
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公开(公告)号： US06911361B2公开(公告)日： 2005-06-28
- 发明人: Fengyan Zhang , Wei-Wei Zhuang , Wei Pan , Sheng Teng Hsu
- 申请人： Fengyan Zhang , Wei-Wei Zhuang , Wei Pan , Sheng Teng Hsu
- 申请人地址： US WA Camas
- 专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人地址： US WA Camas
- 代理商 David C. Ripma; Joseph P. Curtin
- 主分类号： H01L27/108
- IPC分类号： H01L27/108 ; G11C13/00 ; H01L45/00 ; H01L21/8242 ; H01L21/31 ; H01L21/469
摘要：
A method of applying a PCMO thin film on an iridium substrate for use in a RRAM device, includes preparing a substrate; depositing a barrier layer on the substrate; depositing a layer of iridium on the barrier layer; spin coating a layer of PCMO on the iridium; baking the PCMO and substrate in a three-step baking process; post-bake annealing the substrate and the PCMO in a RTP chamber; repeating said spin coating, baking and annealing steps until the PCMO has a desired thickness; annealing the substrate and PCMO; depositing a top electrode; and completing the RRAM device.
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