发明授权
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
-
申请号： US10657068申请日： 2003-09-09
-
公开(公告)号： US06914307B2公开(公告)日： 2005-07-05
- 发明人: Toshiaki Iwamatsu , Takashi Ipposhi , Hideki Naruoka , Nobuyoshi Hattori , Shigeto Maegawa , Yasuo Yamaguchi , Takuji Matsumoto
- 申请人： Toshiaki Iwamatsu , Takashi Ipposhi , Hideki Naruoka , Nobuyoshi Hattori , Shigeto Maegawa , Yasuo Yamaguchi , Takuji Matsumoto
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2000-354043 20001121
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L21/762 ; H01L21/84 ; H01L27/01 ; H01L27/08 ; H01L27/12 ; H01L29/45 ; H01L29/786 ; H01L29/76
摘要：
A semiconductor device includes a semiconductor layer, a plurality of semiconductor elements formed on the semiconductor layer, and an isolation film provided in a surface of the semiconductor layer, semiconductor elements being electrically isolated from each other by the isolation film. The semiconductor device also includes a PN junction portion provided under the isolation film and formed by two semiconductor regions of different conductivity types in the semiconductor layer. The isolation film includes a nitride film provided in a position corresponding to a top of the PN junction portion and has a substantially uniform thickness across the two semiconductor regions and an upper oxide film and a lower oxide film which are provided in upper and lower portions of the nitride film. The surface of the semiconductor layer is silicidized in such a state that a surface of the isolation film is exposed.