发明授权
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US10188642申请日： 2002-07-03
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公开(公告)号： US06916695B2公开(公告)日： 2005-07-12
- 发明人: Hitoshi Wakabayashi , Yukishige Saito
- 申请人： Hitoshi Wakabayashi , Yukishige Saito
- 申请人地址： JP Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Katten Muchin Rosenman LLP
- 优先权： JP2000-13428 20000121
- 主分类号： H01L27/092
- IPC分类号： H01L27/092 ; H01L21/28 ; H01L21/336 ; H01L21/8238 ; H01L29/49 ; H01L29/76 ; H01L29/78 ; H01L31/119
摘要：
One object of the present invention is to suppress a threshold voltage of at least an n-channel MISFET using a nitride of a high melting point metal at it's gate electrode. In order to achieve the object, a gate electrode 109 of a p-channel MISFET is constituted of a titanium nitride film 106 and a tungsten film 107 formed on the film 106 and a gate electrode 110a of an n-channel MISFET is constituted of a titanium nitride film 106a and a tungsten film 107 formed on the film 106a. The titanium nitride film 106a is formed by nitrogen ion implantation in the titanium nitride film 106 to decrease the work function.