发明授权
- 专利标题： Ferroelectric capacitor and semiconductor device
- 专利标题（中）： 铁电电容器和半导体器件
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申请号： US10681173申请日： 2003-10-09
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公开(公告)号： US06917065B2公开(公告)日： 2005-07-12
- 发明人: Tetsuo Fujiwara , Toshihide Nabatame , Takaaki Suzuki , Kazutoshi Higashiyama
- 申请人： Tetsuo Fujiwara , Toshihide Nabatame , Takaaki Suzuki , Kazutoshi Higashiyama
- 申请人地址： JP Tokyo
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 当前专利权人地址： JP Tokyo
- 代理机构： Antonelli, Terry, Stout & Kraus, LLP
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/02 ; H01L21/8242 ; H01L21/8246 ; H01L27/108 ; H01L27/115 ; H01L29/06 ; H01L29/76 ; H01L31/062
摘要：
A ferroelectric capacitor of the type having a top electrode, a ferroelectric thin film, and a bottom electrode, is characterized in that said ferroelectric thin film is a perovskite-type oxide containing Pb and said upper and bottom electrodes contain an intermetallic compound composed of Pt and Pb. An electronic device is provided with said ferroelectric capacitor. This construction is designed to solve the following problems. In a non-volatile ferroelectric memory (FeRAM), a degraded layer occurs near the interface between the PZT and the electrode due to hydrogen evolved during processing or due to diffusion of Pb from the PZT into the electrode. A stress due to a difference in lattice constant occurs in the interface between the electrode and the ferroelectric thin film. The degraded layer and the interfacial stress deteriorate the initial polarizing characteristics of the ferroelectric capacitor and also greatly deteriorate the polarizing characteristics after switching cycles.
公开/授权文献
- US20040075126A1 Ferroelectric capacitor and semiconductor device 公开/授权日：2004-04-22
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