发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US10752409申请日： 2004-01-07
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公开(公告)号： US06917075B2公开(公告)日： 2005-07-12
- 发明人: Akira Inoue , Akira Asai , Teruhito Ohnishi , Haruyuki Sorada , Yoshihiro Hara , Takeshi Takagi
- 申请人： Akira Inoue , Akira Asai , Teruhito Ohnishi , Haruyuki Sorada , Yoshihiro Hara , Takeshi Takagi
- 申请人地址： JP Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2002-142637 20020517
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/768 ; H01L29/78 ; H01L29/786 ; H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
摘要：
A semiconductor device and a method of fabricating the same according to this invention are such that: a gate insulator is formed over a predetermined region of a semiconductor substrate; a gate electrode is formed on the gate insulator; source and drain regions respectively formed in portions of the predetermined region that are situated on both sides of the gate electrode in plan view; a body region formed by a region of the predetermined region exclusive of the source and drain regions; and a contact electrically interconnecting the gate electrode and the body region, wherein a portion of the contact which is connected to the gate electrode is formed to intersect the gate electrode in plan view.
公开/授权文献
- US20040142522A1 Semiconductor device 公开/授权日：2004-07-22
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