发明授权
US06921703B2 System and method for mitigating oxide growth in a gate dielectric
有权
用于减轻栅极电介质中的氧化物生长的系统和方法
- 专利标题： System and method for mitigating oxide growth in a gate dielectric
- 专利标题（中）： 用于减轻栅极电介质中的氧化物生长的系统和方法
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申请号： US10436848申请日： 2003-05-13
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公开(公告)号： US06921703B2公开(公告)日： 2005-07-26
- 发明人: Malcolm J. Bevan , Haowen Bu , Hiroaki Niimi , Husam N. Alshareef
- 申请人： Malcolm J. Bevan , Haowen Bu , Hiroaki Niimi , Husam N. Alshareef
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Yingsheng Tung; Wade James Brady, III; Frederick J. Telecky, Jr.
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L29/49 ; H01L29/51 ; H01L29/78 ; H01L21/336
摘要：
Oxide growth of a gate dielectric layer that occurs between processes used in the fabrication of a gate dielectric structure can be reduced. The reduction in oxide growth can be achieved by maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth of the gate dielectric layer between at least two sequential process steps used in the fabrication the gate dielectric structure. Maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth also improves the uniformity of nitrogen implanted in the gate dielectric.
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