发明授权
- 专利标题： Method for electrodeposited film formation, method for electrode formation, and apparatus for electrodeposited film formation
- 专利标题（中）： 电沉积膜形成方法，电极形成方法和电沉积膜形成装置
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申请号： US10082228申请日： 2002-02-26
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公开(公告)号： US06923892B2公开(公告)日： 2005-08-02
- 发明人: Satoshi Tatsuura , Yasuhiro Sato , Minquan Tian , Lyong Sun Pu
- 申请人： Satoshi Tatsuura , Yasuhiro Sato , Minquan Tian , Lyong Sun Pu
- 申请人地址： JP Tokyo
- 专利权人： Fuji Xerox Co., Ltd.
- 当前专利权人： Fuji Xerox Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Oliff & Berridge, PLC
- 优先权： JP11-136117 19990517
- 主分类号： C25D5/18
- IPC分类号： C25D5/18 ; C23C18/18 ; C25D5/02 ; C25D5/54 ; C25D7/00 ; H01L21/288 ; C25D17/00 ; B05C5/00
摘要：
A method permitting less energy consumption and efficient formation of high quality electrodes is provided. An electrode is formed as an electrodeposited film by irradiating the surface of an object to be treated, the surface at least permitting generation of charged particles when irradiated with a laser beam, with a fentosecond laser beam and metal-plating the surface of a substrate using hot electrons generated by this laser irradiation.
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