Invention Grant
- Patent Title: Strained silicon layer semiconductor product employing strained insulator layer
- Patent Title (中): 应变应变绝缘体层的硅层半导体产品
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Application No.: US10366220Application Date: 2003-02-13
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Publication No.: US06924181B2Publication Date: 2005-08-02
- Inventor: Chien-Chao Huang , Chao-Hsiung Wang , Chung-Hu Ge , Wen-Chin Lee , Chen Ming Hu
- Applicant: Chien-Chao Huang , Chao-Hsiung Wang , Chung-Hu Ge , Wen-Chin Lee , Chen Ming Hu
- Applicant Address: TW Hsin Chu
- Assignee: Taiwan SEmiconductor Manufacturing Co., Ltd
- Current Assignee: Taiwan SEmiconductor Manufacturing Co., Ltd
- Current Assignee Address: TW Hsin Chu
- Agency: Tung & Associates
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L29/778 ; H01L21/336
Abstract:
A strained silicon layer fabrication and a method for fabrication thereof employ a strained insulator material layer formed over a strained silicon layer in turn formed upon a strained silicon-germanium alloy material layer which is formed upon a relaxed material substrate. The strained insulator material layer provides increased fabrication options which provide for enhanced fabrication efficiency when fabricating the strained silicon layer fabrication.
Public/Granted literature
- US20040159834A1 Strained silicon layer semiconductor product employing strained insulator layer Public/Granted day:2004-08-19
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