发明授权
US06927169B2 Method and apparatus to improve thickness uniformity of surfaces for integrated device manufacturing 失效
提高集成器件制造的表面厚度均匀性的方法和装置

Method and apparatus to improve thickness uniformity of surfaces for integrated device manufacturing
摘要:
A method and apparatus for the formation of oxide in a manner having a planarizing effect on underlying material, e.g., silicon. In particular, an oxide having a nonuniform thickness profile is grown on the underlying material. The nonuniform thickness profile of the oxide is selected according to the nonuniform profile of the underlying material. Subsequent removal of the oxide leaves behind a planarized surface of the underlying material, as compared to the pre-oxidized surface.
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