发明授权
- 专利标题： Magnetic memory device
- 专利标题（中）： 磁存储器件
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申请号： US10676465申请日： 2003-09-30
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公开(公告)号： US06927996B2公开(公告)日： 2005-08-09
- 发明人: James R. Eaton, Jr. , Kenneth J. Eldredge
- 申请人： James R. Eaton, Jr. , Kenneth J. Eldredge
- 申请人地址： US TX Houston
- 专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人地址： US TX Houston
- 主分类号： G11C11/15
- IPC分类号： G11C11/15 ; G11C7/00 ; G11C7/12 ; G11C11/14 ; G11C11/16 ; H01L21/8246 ; H01L27/105 ; H01L43/08
摘要：
A magnetic random access memory (MRAM) includes an array of magnetic memory cells arranged on a cross-point grid. Spurious voltages that build up on the stray wiring capacitance of unselected bit and word select lines are limited and discharged by diodes. The control of such spurious voltages improves device operating margins and allows the construction of larger arrays.
公开/授权文献
- US20050068830A1 Magnetic memory device 公开/授权日：2005-03-31
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