发明授权
US06929902B2 Method of preventing repeated collapse in a reworked photoresist layer
有权
防止再加工光致抗蚀剂层中重复塌陷的方法
- 专利标题： Method of preventing repeated collapse in a reworked photoresist layer
- 专利标题（中）： 防止再加工光致抗蚀剂层中重复塌陷的方法
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申请号： US10370441申请日： 2003-02-20
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公开(公告)号： US06929902B2公开(公告)日： 2005-08-16
- 发明人: Yuan-Hsun Wu , Teng-Yen Huang , Wen-Bin Wu , Yi-Nan Chen
- 申请人： Yuan-Hsun Wu , Teng-Yen Huang , Wen-Bin Wu , Yi-Nan Chen
- 申请人地址： TW Taoyuan
- 专利权人： Nanya Technology Corporation
- 当前专利权人： Nanya Technology Corporation
- 当前专利权人地址： TW Taoyuan
- 代理机构： Quintero Law Office
- 优先权： TW91124766A 20021024
- 主分类号： G03F7/42
- IPC分类号： G03F7/42 ; H01L21/027 ; H01L21/311 ; G03F7/36
摘要：
A method of preventing repeated collapse in a reworked photoresist layer. First, oxygen-containing plasma is applied to remove a collapsed photoresist. Because the plasma containing oxygen reacts with a bottom anti-reflect layer comprising SiOxNy, some acids are produced on the bottom anti-reflect layer, resulting in undercutting in a subsequently reworked photoresist. Next, an alkaline solution treatment is performed on the anti-reflect layer after the collapsed photoresist layer is removed. Finally, the reworked photoresist with is formed on the anti-reflect layer, without undercutting.
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