Invention Grant
US06929902B2 Method of preventing repeated collapse in a reworked photoresist layer
有权
防止再加工光致抗蚀剂层中重复塌陷的方法
- Patent Title: Method of preventing repeated collapse in a reworked photoresist layer
- Patent Title (中): 防止再加工光致抗蚀剂层中重复塌陷的方法
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Application No.: US10370441Application Date: 2003-02-20
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Publication No.: US06929902B2Publication Date: 2005-08-16
- Inventor: Yuan-Hsun Wu , Teng-Yen Huang , Wen-Bin Wu , Yi-Nan Chen
- Applicant: Yuan-Hsun Wu , Teng-Yen Huang , Wen-Bin Wu , Yi-Nan Chen
- Applicant Address: TW Taoyuan
- Assignee: Nanya Technology Corporation
- Current Assignee: Nanya Technology Corporation
- Current Assignee Address: TW Taoyuan
- Agency: Quintero Law Office
- Priority: TW91124766A 20021024
- Main IPC: G03F7/42
- IPC: G03F7/42 ; H01L21/027 ; H01L21/311 ; G03F7/36
Abstract:
A method of preventing repeated collapse in a reworked photoresist layer. First, oxygen-containing plasma is applied to remove a collapsed photoresist. Because the plasma containing oxygen reacts with a bottom anti-reflect layer comprising SiOxNy, some acids are produced on the bottom anti-reflect layer, resulting in undercutting in a subsequently reworked photoresist. Next, an alkaline solution treatment is performed on the anti-reflect layer after the collapsed photoresist layer is removed. Finally, the reworked photoresist with is formed on the anti-reflect layer, without undercutting.
Public/Granted literature
- US20040081923A1 Method of preventing repeated collapse in a reworked photoresist layer Public/Granted day:2004-04-29
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