发明授权
US06934196B2 Memory module with magnetoresistive elements and a method of reading data from in-row and in-column directions
失效
具有磁阻元件的存储器模块以及从行和列方向读取数据的方法
- 专利标题： Memory module with magnetoresistive elements and a method of reading data from in-row and in-column directions
- 专利标题（中）： 具有磁阻元件的存储器模块以及从行和列方向读取数据的方法
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申请号： US10200489申请日： 2002-07-23
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公开(公告)号： US06934196B2公开(公告)日： 2005-08-23
- 发明人: Koichi Fujisaki , Kentaro Nakajima , Takeshi Chujoh , Yasuhiro Taniguchi
- 申请人： Koichi Fujisaki , Kentaro Nakajima , Takeshi Chujoh , Yasuhiro Taniguchi
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2001-222783 20010724; JP2001-286471 20010920; JP2002-187094 20020627
- 主分类号： G06F12/02
- IPC分类号： G06F12/02 ; G11C8/10 ; G11C11/15 ; H01L21/8246 ; H01L27/105 ; H01L43/08 ; G11C7/00
摘要：
A memory cell module comprises a memory cell array formed by memory cells of M columns×N rows. Each memory cell includes a magnetoresistive element or a magnetresistive element with a semiconductor element. A memory module comprises a first access means to access the memory cell array by a column direction and a second access means to access the memory cell array by a row direction. In this manner, data is read from a magnetoresistive memory module in both row and column directions.