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US06943366B2 Substrate for semiconductor light-emitting element, semiconductor light-emitting element and semiconductor light-emitting element fabrication method 有权
半导体发光元件用基板，半导体发光元件及半导体发光元件制造方法

Substrate for semiconductor light-emitting element, semiconductor light-emitting element and semiconductor light-emitting element fabrication method
摘要：
A group III nitride underlayer including at least Al, having a dislocation density of ≦1×1011/cm2 and a (002) plane X-ray rocking curve half-width value of ≦200 seconds is formed on a set base material. A p-type semiconductor layer group is formed above the group III nitride underlayer and includes a group III nitride in which the Ga content relative to the total group III elements is ≧50% and in which a carrier density is ≧1×1016/cm3. A light-emitting layer is formed on the p-type semiconductor layer group and includes plural mutually isolated insular crystals. An n-type semiconductor layer group is formed on the light-emitting layer and includes a Ga content relative to the total group III elements of ≧50%.
摘要（中）：

包含至少Al的III族氮化物底层，其位错密度为<= 1×10 11 / cm 2，和（002）面X射线摇摆曲线半宽 在集合的基材上形成<= 200秒的值。 在III族氮化物底层上方形成p型半导体层组，并且包括III族氮化物，其中Ga含量相对于总III族元素> 50％，载流子密度> 1×10 16/3/3 3。 在p型半导体层组上形成发光层，并且包含多个相互隔离的岛状晶体。 在发光层上形成n型半导体层组，并且包含相对于> = 50％的总III族元素的Ga含量。

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