发明授权
- 专利标题： Plasma treatment for copper oxide reduction
- 专利标题（中）： 等离子体处理氧化铜还原
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申请号： US10655438申请日： 2003-09-04
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公开(公告)号： US06946401B2公开(公告)日： 2005-09-20
- 发明人: Judy H. Huang , Christopher Dennis Bencher , Sudha Rathi , Christopher S. Ngai , Bok Hoen Kim
- 申请人： Judy H. Huang , Christopher Dennis Bencher , Sudha Rathi , Christopher S. Ngai , Bok Hoen Kim
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Moser, Patterson & Sheridan
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; B08B7/00 ; C23C16/02 ; C23G5/00 ; H01L21/02 ; H01L21/306 ; H01L21/3065 ; H01L21/31 ; H01L21/311 ; H01L21/314 ; H01L21/318 ; H01L21/3205 ; H01L21/3213 ; H01L21/768 ; H01L23/10 ; H01L23/52 ; H01L23/532
摘要：
The present invention provides an in situ plasma reducing process to reduce oxides or other contaminants, using a compound of nitrogen and hydrogen, typically ammonia, at relatively low temperatures prior to depositing a subsequent layer thereon. The adhesion characteristics of the layers are improved and oxygen presence is reduced compared to the typical physical sputter cleaning process of an oxide layer. This process may be particularly useful for the complex requirements of a dual damascene structure, especially with copper applications.
公开/授权文献
- US20040046260A1 Plasma treatment for copper oxide reduction 公开/授权日：2004-03-11
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