发明授权
- 专利标题: Semiconductor memory device, and method of controlling the same
- 专利标题(中): 半导体存储器件及其控制方法
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申请号: US10623544申请日: 2003-07-22
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公开(公告)号: US06947347B2公开(公告)日: 2005-09-20
- 发明人: Shinya Fujioka
- 申请人: Shinya Fujioka
- 申请人地址: JP Kawasaki
- 专利权人: Fujitsu Limited
- 当前专利权人: Fujitsu Limited
- 当前专利权人地址: JP Kawasaki
- 代理机构: Arent Fox PLLC
- 优先权: JP11-318458 19991109; JP2000-241019 20000809; JP2000-329493 20001027
- 主分类号: G06F1/26
- IPC分类号: G06F1/26 ; G06F1/32 ; G11C5/14 ; G11C11/406 ; H02M3/07 ; G11C7/00
摘要:
An internal voltage generator when activated, generates an internal voltage to be supplied to an internal circuit. Operating the internal voltage generator consumes a predetermined amount of the power. In response to a control signal from the exterior, an entry circuit inactivates the internal voltage generator. When the internal voltage generator is inactivated, the internal voltage is not generated, thereby reducing the power consumption. By the control signal from the exterior, therefore, a chip can easily enter a low power consumption mode. The internal voltage generator is exemplified by a booster for generating the boost voltage of a word line connected with memory cells, a substrate voltage generator for generating a substrate voltage, or a precharging voltage generator for generating the precharging voltage of bit lines to be connected with the memory cells.
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