Invention Grant
- Patent Title: Emitter for electron-beam projection lithography system and manufacturing method thereof
- Patent Title (中): 电子束投影光刻系统的发射体及其制造方法
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Application No.: US10674459Application Date: 2003-10-01
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Publication No.: US06953946B2Publication Date: 2005-10-11
- Inventor: In-kyeong Yoo , Chang-wook Moon , Soo-hwan Jeong , Dong-wook Kim
- Applicant: In-kyeong Yoo , Chang-wook Moon , Soo-hwan Jeong , Dong-wook Kim
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Burns, Doane, Swecker & Mathis, L.L.P.
- Main IPC: G03F7/20
- IPC: G03F7/20 ; H01J1/312 ; H01J9/02 ; H01J37/06 ; H01J37/073 ; H01J37/305 ; H01L21/027 ; H01L29/06 ; H01L29/12 ; H01L29/82 ; H01L43/00

Abstract:
An emitter for an electron-beam projection lithography (EPL) system and a manufacturing method therefor are provided. The electron-beam emitter includes a substrate, an insulating layer overlying the substrate, and a gate electrode including a base layer formed on top of the insulating layer to a uniform thickness and an electron-beam blocking layer formed on the base layer in a predetermined pattern. The manufacturing method includes steps of: preparing a substrate; forming an insulating layer on the substrate; forming a base layer of a gate electrode by depositing a conductive metal on the insulating layer to a predetermined thickness; forming an electron-beam blocking layer of the gate electrode by depositing a metal capable of anodizing on the base layer to a predetermined thickness; and patterning the electron-beam blocking layer in a predetermined pattern by anodizing. The emitter provides a uniform electric field within the insulating layer and simplify the manufacturing method therefor.
Public/Granted literature
- US20040178405A1 Emitter for electron-beam projection lithography system and manufacturing method thereof Public/Granted day:2004-09-16
Information query
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