发明授权
US06958511B1 Flash memory device and method of fabrication thereof including a bottom oxide layer with two regions with different concentrations of nitrogen
有权
闪速存储器件及其制造方法，其包括具有不同氮浓度的两个区域的底部氧化物层
- 专利标题： Flash memory device and method of fabrication thereof including a bottom oxide layer with two regions with different concentrations of nitrogen
- 专利标题（中）： 闪速存储器件及其制造方法，其包括具有不同氮浓度的两个区域的底部氧化物层
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申请号： US10679774申请日： 2003-10-06
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公开(公告)号： US06958511B1公开(公告)日： 2005-10-25
- 发明人: Arvind Halliyal , Amir H. Jafarpour , Hidehiko Shiraiwa , Tazrien Kamal , Mark Ramsbey , Jaeyong Park
- 申请人： Arvind Halliyal , Amir H. Jafarpour , Hidehiko Shiraiwa , Tazrien Kamal , Mark Ramsbey , Jaeyong Park
- 申请人地址： US CA Sunnyvale
- 专利权人： FASL, LLC
- 当前专利权人： FASL, LLC
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Renner, Otto, Boisselle & Sklar LLP
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/31 ; H01L21/336 ; H01L21/8238 ; H01L29/51 ; H01L29/76 ; H01L29/788 ; H01L29/792
摘要：
Process of fabricating multi-bit charge trapping dielectric flash memory device, including forming on a semiconductor substrate a bottom oxide layer to define a substrate/oxide interface, in which the bottom oxide layer includes a first oxygen concentration and a first nitrogen concentration; and adding a quantity of nitrogen to the bottom oxide layer, whereby the bottom oxide layer includes a first region adjacent the charge storage layer and a second region adjacent the substrate/oxide interface, the second region having a second oxygen concentration and a second nitrogen concentration, in which the second nitrogen concentration exceeds the first nitrogen concentration, provided that the second nitrogen concentration does not exceed the second oxygen concentration. In one embodiment, the first nitrogen concentration is substantially zero.
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