发明授权
- 专利标题： Stacked ferroelectric memory device and method of making same
- 专利标题（中）： 堆叠铁电存储器件及其制造方法
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申请号： US09960125申请日： 2001-09-21
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公开(公告)号： US06960479B2公开(公告)日： 2005-11-01
- 发明人: Jian Li , Xiao-Chun Mu
- 申请人： Jian Li , Xiao-Chun Mu
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理商 Tony M. Martinez
- 主分类号： G11C11/22
- IPC分类号： G11C11/22 ; H01L21/00 ; H01L27/28 ; H01L31/113 ; H01L31/119 ; H01R4/24 ; H01R13/648 ; H01R33/02 ; H01R39/00
摘要：
The present invention relates to a ferroelectric polymer storage device including at least two stacked ferroelectric polymer memory structures that are arrayed next to at least two respective stacked topologies that are a pre-fabricated silicon substrate cavity that includes interlayer dielectric layers and via structures. Combining ferroelectric polymer and ferroelectric oxide layers on the pre-fabricated silicon substrate cavity forms a multi-rank structure.
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