Invention Grant
- Patent Title: Method of forming a metal gate
- Patent Title (中): 形成金属门的方法
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Application No.: US10011843Application Date: 2001-12-04
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Publication No.: US06960515B2Publication Date: 2005-11-01
- Inventor: Mahn-Ho Cho , Ja-Hum Ku , Chul-Joon Choi , Jun-Kyu Cho , Seong-Jun Heo
- Applicant: Mahn-Ho Cho , Ja-Hum Ku , Chul-Joon Choi , Jun-Kyu Cho , Seong-Jun Heo
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Mills & Onello LLP
- Priority: KR2001-12600 20010312
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/28 ; H01L29/423 ; H01L29/43 ; H01L29/49 ; H01L29/78 ; H01L21/3205 ; H01L21/31 ; H01L21/8234
Abstract:
In a method of forming a metal gate electrode, an annealing process is performed in a hydrogen-containing gas ambient following a selective oxidation process. During the annealing process, a metal oxide layer formed by the selective oxidation process is removed by a reduction reaction or hydrogen atoms are contained in the metal oxide layer to suppress whisker nucleation and surface mobility.
Public/Granted literature
- US20020127888A1 Method of forming a metal gate Public/Granted day:2002-09-12
Information query
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