公开(公告)号：US06960515B2

公开(公告)日：2005-11-01

申请号：US10011843

申请日：2001-12-04

Applicant: Mahn-Ho Cho ,  Ja-Hum Ku ,  Chul-Joon Choi ,  Jun-Kyu Cho ,  Seong-Jun Heo

Inventor： Mahn-Ho Cho ,  Ja-Hum Ku ,  Chul-Joon Choi ,  Jun-Kyu Cho ,  Seong-Jun Heo

IPC: H01L21/336 ,  H01L21/28 ,  H01L29/423 ,  H01L29/43 ,  H01L29/49 ,  H01L29/78 ,  H01L21/3205 ,  H01L21/31 ,  H01L21/8234

CPC classification number: H01L21/28061 ,  H01L21/28247

Abstract: In a method of forming a metal gate electrode, an annealing process is performed in a hydrogen-containing gas ambient following a selective oxidation process. During the annealing process, a metal oxide layer formed by the selective oxidation process is removed by a reduction reaction or hydrogen atoms are contained in the metal oxide layer to suppress whisker nucleation and surface mobility.

Abstract translation: 在形成金属栅电极的方法中，在选择性氧化工艺之后的含氢气体环境中进行退火处理。 在退火过程中，通过还原反应去除通过选择性氧化工艺形成的金属氧化物层，或者在金属氧化物层中包含氢原子以抑制晶须成核和表面迁移率。

公开(公告)号：US06764961B2

公开(公告)日：2004-07-20

申请号：US09992980

申请日：2001-11-06

Applicant: Ja-Hum Ku ,  Mahn-Ho Cho ,  Chul-Joon Choi ,  Seong-Jun Heo ,  Jun-Kyu Cho

Inventor： Ja-Hum Ku ,  Mahn-Ho Cho ,  Chul-Joon Choi ,  Seong-Jun Heo ,  Jun-Kyu Cho

IPC: H01L2131

CPC classification number: H01L29/4941 ,  H01L21/28088 ,  H01L21/32105 ,  H01L21/823437

Abstract: The present invention includes a method of forming a metal gate electrode on which whiskers are not formed after performing a selective oxidation process and a subsequent heating process. The metal gate electrode is formed by forming a metal gate electrode pattern which is comprised of a polysilicon layer and a metal layer, and performing a selective oxidation process. After the selective oxidation process, the metal gate electrode undergoes a subsequent heating treatment. The selective oxidation process is carried out in a nitrogen containing gas ambient, so that a metal oxide layer is minimally formed on the metal layer. As a result, it is prevented from causing whiskers on the metal layer.

Abstract translation: 本发明包括在进行选择氧化处理和随后的加热处理之后形成不形成晶须的金属栅电极的方法。 通过形成由多晶硅层和金属层构成的金属栅电极图案，进行选择氧化处理，形成金属栅电极。 在选择氧化处理之后，金属栅电极进行随后的加热处理。 选择性氧化工艺在含氮气体环境中进行，使得在金属层上最少形成金属氧化物层。 结果，防止在金属层上产生晶须。