发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US10320576申请日： 2002-12-17
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公开(公告)号： US06960797B2公开(公告)日： 2005-11-01
- 发明人: Shigeaki Okawa , Toshiyuki Ohkoda
- 申请人： Shigeaki Okawa , Toshiyuki Ohkoda
- 申请人地址： JP Osaka
- 专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： Wenderoth, Lind & Ponack, L.L.P.
- 优先权： JP11/61415 19990309
- 主分类号： H01L29/73
- IPC分类号： H01L29/73 ; H01L21/331 ; H01L21/337 ; H01L21/761 ; H01L21/8222 ; H01L21/8248 ; H01L27/06 ; H01L29/732 ; H01L29/808 ; H04R3/00 ; H01L29/80 ; H01L31/112
摘要：
The object of the present invention is to provide a semiconductor device, which is suitable for use to connect electric condenser microphones. A semiconductor device, comprises: a conductivity-type substrate; an epitaxial layer formed on top of the substrate; island regions separating the epitaxial layer; an input transistor formed on one of the island regions; an insulation layer covering the surface of the input transistor layer; an expansion electrode formed above the insulation layer so as to provide an electrical connection to an input terminal of the input transistor; and resistivity of the epitaxial layer formed below the expansion electrode being in a range of 1000˜5,000 Ω·cm.
公开/授权文献
- US20030122167A1 Semiconductor device 公开/授权日：2003-07-03
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