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    Semiconductor device
    1.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US06566728B1

    公开(公告)日：2003-05-20

    申请号：US09678555

    申请日：2000-10-04

    申请人： Shigeaki Okawa ,  Toshiyuki Ohkoda ,  Yoshiaki Ohbayashi ,  Mamoru Yasuda ,  Shinichi Saeki ,  Shuji Osawa

    发明人： Shigeaki Okawa ,  Toshiyuki Ohkoda ,  Yoshiaki Ohbayashi ,  Mamoru Yasuda ,  Shinichi Saeki ,  Shuji Osawa

    IPC分类号： H01L2900

    CPC分类号： H04R19/005 ,  H04R19/04

    摘要： First, a stationary electrode layer is formed over a semiconductor substrate and an integrated network is composed in a circuit element area around the stationary electrode layer by electrode wiring forming each circuit element. A spacer is arranged on a passivation film in plural places. A dummy island is formed in an area between the circuit element area and the stationary electrode layer area. Supply potential Vcc is applied to the dummy island and ground potential GND is applied to a P+-type separated area.

    摘要翻译： 首先，在半导体衬底上形成固定电极层，并且通过形成每个电路元件的电极布线，在固定电极层周围的电路元件区域中形成集成网络。 在多个位置上在隔离膜上设置间隔物。 在电路元件区域和固定电极层区域之间的区域中形成虚设的岛。 将供电电位Vcc施加到虚拟岛，将接地电位GND施加到P +型分离区域。

    Semiconductor device
    7.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US06960797B2

    公开(公告)日：2005-11-01

    申请号：US10320576

    申请日：2002-12-17

    申请人： Shigeaki Okawa ,  Toshiyuki Ohkoda

    发明人： Shigeaki Okawa ,  Toshiyuki Ohkoda

    IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L21/337 ,  H01L21/761 ,  H01L21/8222 ,  H01L21/8248 ,  H01L27/06 ,  H01L29/732 ,  H01L29/808 ,  H04R3/00 ,  H01L29/80 ,  H01L31/112

    CPC分类号： H01L21/761 ,  H01L27/0635 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The object of the present invention is to provide a semiconductor device, which is suitable for use to connect electric condenser microphones. A semiconductor device, comprises: a conductivity-type substrate; an epitaxial layer formed on top of the substrate; island regions separating the epitaxial layer; an input transistor formed on one of the island regions; an insulation layer covering the surface of the input transistor layer; an expansion electrode formed above the insulation layer so as to provide an electrical connection to an input terminal of the input transistor; and resistivity of the epitaxial layer formed below the expansion electrode being in a range of 1000˜5,000 Ω·cm.

    摘要翻译： 本发明的目的是提供一种适用于连接电容式麦克风的半导体器件。 一种半导体器件，包括：导电型衬底; 形成在基板顶部的外延层; 分离外延层的岛区; 形成在所述岛区域之一上的输入晶体管; 绝缘层，覆盖输入晶体管层的表面; 扩展电极，形成在绝缘层之上，以便提供与输入晶体管的输入端的电连接; 并且形成在膨胀电极下方的外延层的电阻率在1000〜5000Ω·cm的范围内。

    Semiconductor integrated circuit device and manufacturing method thereof
    8.
    发明授权
    Semiconductor integrated circuit device and manufacturing method thereof 有权

    公开(公告)号：US06590273B2

    公开(公告)日：2003-07-08

    申请号：US10029895

    申请日：2001-12-21

    申请人： Shigeaki Okawa ,  Toshiyuki Ohkoda

    发明人： Shigeaki Okawa ,  Toshiyuki Ohkoda

    IPC分类号： H01L2900

    CPC分类号： H01L29/66272 ,  H01L27/0664 ,  H01L29/0821 ,  H01L29/8611

    摘要： In the semiconductor integrated circuit device, a first P+ type buried layer formed as an anode region and an N+ type diffused region formed in a cathode region are spaced from each other in the direction of the depth. This makes it possible to provide a semiconductor integrated circuit device in which a large depletion layer forming region can be provided in an N type region at a PN junction formed by first and second epitaxial layers and when a reverse bias voltage is applied to a diode element and in which a withstand voltage can be maintained by a depletion layer thus formed to prevent breakdown of elements in the device attributable to a breakdown current.

    Semiconductor device
    9.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US06555857B1

    公开(公告)日：2003-04-29

    申请号：US09520950

    申请日：2000-03-08

    申请人： Shigeaki Okawa ,  Toshiyuki Ohkoda

    发明人： Shigeaki Okawa ,  Toshiyuki Ohkoda

    IPC分类号： H01L2980

    CPC分类号： H01L21/761 ,  H01L27/0635 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The object of the present invention is to provide a semiconductor device, which is suitable for use to connect electric condenser microphones. A semiconductor device, comprises: a conductivity-type substrate; an epitaxial layer formed on top of the substrate; island regions separating the epitaxial layer; an input transistor formed on one of the island regions; an insulation layer covering the surface of the input transistor layer; an expansion electrode formed above the insulation layer so as to provide an electrical connection to an input terminal of the input transistor; and resistivity of the epitaxial layer formed below the expansion electrode being in a range of 1000˜5,000 &OHgr;·cm.

    摘要翻译： 本发明的目的是提供一种适用于连接电容式麦克风的半导体器件。 一种半导体器件，包括：导电型衬底; 形成在基板顶部的外延层; 分离外延层的岛区; 形成在所述岛区域之一上的输入晶体管; 绝缘层，覆盖输入晶体管层的表面; 扩展电极，形成在绝缘层之上，以便提供与输入晶体管的输入端的电连接; 并且形成在膨胀电极下方的外延层的电阻率在1000〜5000欧姆·厘米的范围内。

    Method of manufacturing a semiconductor integrated circuit device
    10.
    发明授权
    Method of manufacturing a semiconductor integrated circuit device 失效
    制造半导体集成电路器件的方法

    公开(公告)号：US5747375A

    公开(公告)日：1998-05-05

    申请号：US673052

    申请日：1996-07-01

    申请人： Satoru Kaneko ,  Toshiyuki Ohkoda

    发明人： Satoru Kaneko ,  Toshiyuki Ohkoda

    IPC分类号： H01L21/02 ,  H01L21/20

    CPC分类号： H01L28/40

    摘要： A method of manufacturing a semiconductor integrated circuit device employs a new reflowing process of an insulating film having contact holes and openings therethrough. A good step coverage of a wiring electrode at the contact holes of the insulating film can be obtained with reduced thermal cycles in the manufacturing of integrated circuit devices, and also with a reduced heat treatment temperature of the reflowing process. The process includes a step of depositing a silicon nitride film on the insulating film and on the contact holes by chemical vapor deposition at a temperature between 700.degree. C. and 800.degree. C. so as to deform edges of the contact holes in the insulating film to be rounded and smooth.

    摘要翻译： 半导体集成电路器件的制造方法采用具有接触孔和开口的绝缘膜的新的回流工艺。 在集成电路器件的制造中，可以获得在绝缘膜的接触孔处的布线电极的良好的阶梯覆盖，并且还具有降低的回流工艺的热处理温度。 该方法包括通过在700℃至800℃之间的温度下通过化学气相沉积在绝缘膜上和接触孔上沉积氮化硅膜的步骤，以使绝缘膜中接触孔的边缘变形 圆润光滑。