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    Semiconductor device
    1.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US06566728B1

    公开(公告)日：2003-05-20

    申请号：US09678555

    申请日：2000-10-04

    申请人： Shigeaki Okawa ,  Toshiyuki Ohkoda ,  Yoshiaki Ohbayashi ,  Mamoru Yasuda ,  Shinichi Saeki ,  Shuji Osawa

    发明人： Shigeaki Okawa ,  Toshiyuki Ohkoda ,  Yoshiaki Ohbayashi ,  Mamoru Yasuda ,  Shinichi Saeki ,  Shuji Osawa

    IPC分类号： H01L2900

    CPC分类号： H04R19/005 ,  H04R19/04

    摘要： First, a stationary electrode layer is formed over a semiconductor substrate and an integrated network is composed in a circuit element area around the stationary electrode layer by electrode wiring forming each circuit element. A spacer is arranged on a passivation film in plural places. A dummy island is formed in an area between the circuit element area and the stationary electrode layer area. Supply potential Vcc is applied to the dummy island and ground potential GND is applied to a P+-type separated area.

    摘要翻译： 首先，在半导体衬底上形成固定电极层，并且通过形成每个电路元件的电极布线，在固定电极层周围的电路元件区域中形成集成网络。 在多个位置上在隔离膜上设置间隔物。 在电路元件区域和固定电极层区域之间的区域中形成虚设的岛。 将供电电位Vcc施加到虚拟岛，将接地电位GND施加到P +型分离区域。

    Semiconductor device
    7.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US06960797B2

    公开(公告)日：2005-11-01

    申请号：US10320576

    申请日：2002-12-17

    申请人： Shigeaki Okawa ,  Toshiyuki Ohkoda

    发明人： Shigeaki Okawa ,  Toshiyuki Ohkoda

    IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L21/337 ,  H01L21/761 ,  H01L21/8222 ,  H01L21/8248 ,  H01L27/06 ,  H01L29/732 ,  H01L29/808 ,  H04R3/00 ,  H01L29/80 ,  H01L31/112

    CPC分类号： H01L21/761 ,  H01L27/0635 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The object of the present invention is to provide a semiconductor device, which is suitable for use to connect electric condenser microphones. A semiconductor device, comprises: a conductivity-type substrate; an epitaxial layer formed on top of the substrate; island regions separating the epitaxial layer; an input transistor formed on one of the island regions; an insulation layer covering the surface of the input transistor layer; an expansion electrode formed above the insulation layer so as to provide an electrical connection to an input terminal of the input transistor; and resistivity of the epitaxial layer formed below the expansion electrode being in a range of 1000˜5,000 Ω·cm.

    摘要翻译： 本发明的目的是提供一种适用于连接电容式麦克风的半导体器件。 一种半导体器件，包括：导电型衬底; 形成在基板顶部的外延层; 分离外延层的岛区; 形成在所述岛区域之一上的输入晶体管; 绝缘层，覆盖输入晶体管层的表面; 扩展电极，形成在绝缘层之上，以便提供与输入晶体管的输入端的电连接; 并且形成在膨胀电极下方的外延层的电阻率在1000〜5000Ω·cm的范围内。

    Semiconductor integrated circuit device and manufacturing method thereof
    8.
    发明授权
    Semiconductor integrated circuit device and manufacturing method thereof 有权

    公开(公告)号：US06590273B2

    公开(公告)日：2003-07-08

    申请号：US10029895

    申请日：2001-12-21

    申请人： Shigeaki Okawa ,  Toshiyuki Ohkoda

    发明人： Shigeaki Okawa ,  Toshiyuki Ohkoda

    IPC分类号： H01L2900

    CPC分类号： H01L29/66272 ,  H01L27/0664 ,  H01L29/0821 ,  H01L29/8611

    摘要： In the semiconductor integrated circuit device, a first P+ type buried layer formed as an anode region and an N+ type diffused region formed in a cathode region are spaced from each other in the direction of the depth. This makes it possible to provide a semiconductor integrated circuit device in which a large depletion layer forming region can be provided in an N type region at a PN junction formed by first and second epitaxial layers and when a reverse bias voltage is applied to a diode element and in which a withstand voltage can be maintained by a depletion layer thus formed to prevent breakdown of elements in the device attributable to a breakdown current.

    Semiconductor device
    9.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US06555857B1

    公开(公告)日：2003-04-29

    申请号：US09520950

    申请日：2000-03-08

    申请人： Shigeaki Okawa ,  Toshiyuki Ohkoda

    发明人： Shigeaki Okawa ,  Toshiyuki Ohkoda

    IPC分类号： H01L2980

    CPC分类号： H01L21/761 ,  H01L27/0635 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The object of the present invention is to provide a semiconductor device, which is suitable for use to connect electric condenser microphones. A semiconductor device, comprises: a conductivity-type substrate; an epitaxial layer formed on top of the substrate; island regions separating the epitaxial layer; an input transistor formed on one of the island regions; an insulation layer covering the surface of the input transistor layer; an expansion electrode formed above the insulation layer so as to provide an electrical connection to an input terminal of the input transistor; and resistivity of the epitaxial layer formed below the expansion electrode being in a range of 1000˜5,000 &OHgr;·cm.

    摘要翻译： 本发明的目的是提供一种适用于连接电容式麦克风的半导体器件。 一种半导体器件，包括：导电型衬底; 形成在基板顶部的外延层; 分离外延层的岛区; 形成在所述岛区域之一上的输入晶体管; 绝缘层，覆盖输入晶体管层的表面; 扩展电极，形成在绝缘层之上，以便提供与输入晶体管的输入端的电连接; 并且形成在膨胀电极下方的外延层的电阻率在1000〜5000欧姆·厘米的范围内。

    Semiconductor integrated circuit device
    10.
    发明申请
    Semiconductor integrated circuit device 有权
    半导体集成电路器件

    公开(公告)号：US20050087771A1

    公开(公告)日：2005-04-28

    申请号：US10949569

    申请日：2004-09-24

    申请人： Ryo Kanda ,  Shigeaki Okawa ,  Kazuhiro Yoshitake

    发明人： Ryo Kanda ,  Shigeaki Okawa ,  Kazuhiro Yoshitake

    IPC分类号： H01L21/331 ,  H01L21/822 ,  H01L21/8222 ,  H01L27/04 ,  H01L27/06 ,  H01L27/082 ,  H01L29/732 ,  H01L29/745

    CPC分类号： H01L27/0821 ,  H01L27/0647

    摘要： A semiconductor integrated circuit device according to the present invention includes a diode in a second island region. The anode region of the diode and the dividing region in a first island region having a horizontal PNP transistor are electrically connected to each other; the cathode region of the diode and the collector region of a power NPN transistor are electrically connected to each other. Accordingly, the dividing region in the first island region having a horizontal PNP transistor becomes lower in potential than the dividing regions in the other island regions, so that the inflow of free carriers (electrons) to the horizontal PNP transistor can be prevented.

    摘要翻译： 根据本发明的半导体集成电路器件包括在第二岛区中的二极管。 二极管的阳极区域和具有水平PNP晶体管的第一岛区域中的分割区域彼此电连接; 二极管的阴极区域和功率NPN晶体管的集电极区域彼此电连接。 因此，具有水平PNP晶体管的第一岛状区域中的分割区域的电位低于其他岛状区域中的分割区域，从而可以防止自由载流子（电子）向水平PNP晶体管的流入。