发明授权
- 专利标题： Semiconductor device and method for fabricating the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US09734176申请日： 2000-12-12
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公开(公告)号： US06960800B2公开(公告)日： 2005-11-01
- 发明人: Takumi Mikawa , Yuji Judai
- 申请人： Takumi Mikawa , Yuji Judai
- 申请人地址： JP Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： Nixon Peabody LLP
- 代理商 Donald R. Studebaker
- 优先权： JP11-353104 19991213
- 主分类号： H01G4/12
- IPC分类号： H01G4/12 ; H01L21/02 ; H01L21/203 ; H01L21/768 ; H01L21/822 ; H01L21/8242 ; H01L27/04 ; H01L27/10 ; H01L27/105 ; H01L27/108 ; H01L29/76 ; H01L23/48 ; H01L23/52 ; H01L29/00
摘要：
A lower electrode is formed on a substrate, a capacitive insulating film is formed out of a ferroelectric film on the lower electrode, and an upper electrode is formed on the capacitive insulating film. A contact layer is formed on the upper electrode. The contact layer is either a single-layer film made of a metal oxide or a metal nitride or a multilayer structure made up of metal oxide and metal nitride films. An insulating film is formed to cover the lower electrode, capacitive insulating film, upper electrode and contact layer. A contact hole is opened through the insulating film and the contact layer to reach the upper electrode. A metal interconnect, which is filled in the contact hole and connected to the upper electrode, is formed on a part of the insulating film.
公开/授权文献
- US20020030243A1 Semiconductor device and method for fabricating the same 公开/授权日：2002-03-14
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