- 专利标题： Magnetic memory device and method of manufacturing the same
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申请号： US10915511申请日： 2004-08-10
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公开(公告)号： US06963099B2公开(公告)日： 2005-11-08
- 发明人: Yoshiaki Fukuzumi
- 申请人： Yoshiaki Fukuzumi
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Hogan & Hartson, LLP
- 优先权： JP2002-278071 20020924
- 主分类号： H01L27/105
- IPC分类号： H01L27/105 ; G11C11/15 ; H01L21/8246 ; H01L27/22 ; H01L43/08 ; H01L29/76
摘要：
A magnetic memory device includes a magnetoresistance configured to store information. A first wiring is provided along a first direction. The first wiring has a function of applying a magnetic field to the magnetoresistance element. The first wiring has a first surface and a second surface. The second surface faces the magnetoresistance element and the first surface is opposite to it. The second surface is smaller in width than the first surface.
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