发明授权
- 专利标题: Recessed channel
- 专利标题(中): 嵌入渠道
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申请号: US10683631申请日: 2003-10-10
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公开(公告)号: US06963108B1公开(公告)日: 2005-11-08
- 发明人: Inkuk Kang , Hiroyuki Kinoshita , Jeff P. Erhardt , Emmanuil H. Lingunis
- 申请人: Inkuk Kang , Hiroyuki Kinoshita , Jeff P. Erhardt , Emmanuil H. Lingunis
- 申请人地址: US CA Sunnyvale
- 专利权人: Advanced Micro Devices, Inc.
- 当前专利权人: Advanced Micro Devices, Inc.
- 当前专利权人地址: US CA Sunnyvale
- 代理机构: Renner, Otto, Boisselle & Sklar, LLP
- 主分类号: H01L21/28
- IPC分类号: H01L21/28 ; H01L21/336 ; H01L21/8246 ; H01L27/115 ; H01L29/04 ; H01L29/78 ; H01L29/792
摘要:
A memory cell with reduced short channel effects is described. A trench region is formed in a semiconductor substrate. A source region and a drain region are formed on opposing sides of the trench region, wherein a bottom of the source region and a bottom of the drain region are above a floor of the trench region. A gate dielectric layer is formed in the trench region of the semiconductor substrate between the source region and the drain region. A recessed channel region is formed below the trench region, the source region and the drain region. A control gate is formed on the semiconductor substrate above the recessed channel region, wherein the control gate is separated from the recessed channel region by the gate dielectric layer.