发明授权
- 专利标题： Image sensor fabrication method and structure
- 专利标题（中）： 图像传感器制造方法和结构
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申请号： US10781217申请日： 2004-02-17
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公开(公告)号： US06964916B2公开(公告)日： 2005-11-15
- 发明人: Chin Chen Kuo , Chih-Kung Chang , Hung-Jen Hsu , Fu-Tien Weng , Te-Fu Tseng
- 申请人： Chin Chen Kuo , Chih-Kung Chang , Hung-Jen Hsu , Fu-Tien Weng , Te-Fu Tseng
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Duane Morris LLP
- 代理商 Steven E. Koffs
- 主分类号： H01L21/46
- IPC分类号： H01L21/46 ; H01L21/78 ; H01L27/146 ; H01L29/768
摘要：
A method for processing a semiconductor substrate includes providing a substrate having at least one filter region with a plurality of bond pads in it. Metal is deposited above the bond pads, to reduce the bond pad step height. A planarization layer is formed such that the deposited metal has a height near to a height of the planarization layer. At least one color resist layer is formed above the planarization layer.
公开/授权文献
- US20040248384A1 Image sensor fabrication method and structure 公开/授权日：2004-12-09
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