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    Semiconductor device with micro-lens and method of making the same
    2.
    发明申请
    Semiconductor device with micro-lens and method of making the same 有权
    具有微透镜的半导体器件及其制造方法

    公开(公告)号：US20070015305A1

    公开(公告)日：2007-01-18

    申请号：US11181189

    申请日：2005-07-13

    申请人： Jeng-Shyan Lin ,  Chien-Hsien Tseng ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Dun-Nian Yaung ,  Hung-Jen Hsu

    发明人： Jeng-Shyan Lin ,  Chien-Hsien Tseng ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Dun-Nian Yaung ,  Hung-Jen Hsu

    IPC分类号： H01L21/00

    CPC分类号： H01L27/14685 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632

    摘要： A semiconductor device including a semiconductor substrate having a photosensor formed therein; a first layer overlying the substrate, the first layer includes a portion having a generally concave shaped surface being the negative shaped of a micro-lens to be formed there over; a second layer overlying the first layer, the second layer including a generally convex shaped portion vertically aligned with and mating with the generally concave shaped surface, the generally convex shaped portion being constructed and arranged to define a micro-lens positioned to cause parallel light passing through the micro-lens to converge on and strike the photosensor.

    摘要翻译： 一种半导体器件，包括其中形成有光电传感器的半导体衬底; 覆盖衬底的第一层，第一层包括具有大致凹形形状的表面的部分，其为在其上形成的微透镜的负形状; 覆盖第一层的第二层，第二层包括垂直对准并与大致凹形的表面配合的大致凸形的部分，大体上凸形的部分被构造和布置以限定微透镜，定位成使得平行光通过 通过微透镜收敛并撞击光电传感器。

    Image sensor with improved uniformity of effective incident light
    3.
    发明授权
    Image sensor with improved uniformity of effective incident light 有权
    具有改善有效入射光均匀性的图像传感器

    公开(公告)号：US07126099B2

    公开(公告)日：2006-10-24

    申请号：US10649436

    申请日：2003-08-26

    申请人： Hung-Jen Hsu ,  Chiu-Kung Chang ,  Chung-Sheng Hsiung ,  Fu-Tien Wong

    发明人： Hung-Jen Hsu ,  Chiu-Kung Chang ,  Chung-Sheng Hsiung ,  Fu-Tien Wong

    IPC分类号： H01L27/00 ,  H01L31/0232 ,  H04N3/14 ,  G02B27/10

    CPC分类号： H01L27/14643 ,  H01L27/14621 ,  H01L27/14627

    摘要： An image sensor improving the uniformity of effective incident light. In one example, the size of microlenses disposed in different regions of the image sensor is changed to balance the brightness in different regions, in which the size of each microlens is a function of the distance between the microlens to the chip center In another example, the distance between the center of the microlens and the center of the corresponding sensing area is changed to balance the brightness in different regions and the corresponding color filters are shifted such that the microlens is overlying a corresponding color filter unit without overlying adjacent regions thereof, in which the distance between the center of the microlens and the center of the corresponding sensing area is a function of the distance between the corresponding sensing area to the chip center.

    摘要翻译： 一种改善有效入射光均匀性的图像传感器。 在一个示例中，设置在图像传感器的不同区域中的微透镜的尺寸被改变以平衡不同区域中的亮度，其中每个微透镜的尺寸是微透镜与芯片中心之间的距离的函数。在另一示例中， 改变微透镜的中心与相应感测区域的中心之间的距离，以平衡不同区域中的亮度，并且相应的滤色器被移位，使得微透镜覆盖相应的滤色器单元而不覆盖其相邻区域， 其中微透镜的中心与相应感测区域的中心之间的距离是与芯片中心的相应感测区域之间的距离的函数。

    Image sensor with improved uniformity of effective incident light
    4.
    发明申请
    Image sensor with improved uniformity of effective incident light 有权
    具有改善有效入射光均匀性的图像传感器

    公开(公告)号：US20050045803A1

    公开(公告)日：2005-03-03

    申请号：US10649436

    申请日：2003-08-26

    申请人： Hung-Jen Hsu ,  Chiu-Kung Chang ,  Chung-Sheng Hsiung ,  Fu-Tien Wong

    发明人： Hung-Jen Hsu ,  Chiu-Kung Chang ,  Chung-Sheng Hsiung ,  Fu-Tien Wong

    IPC分类号： G02B3/00 ,  H01L27/00 ,  H01L27/14 ,  H01L27/146 ,  H04N5/335

    CPC分类号： H01L27/14643 ,  H01L27/14621 ,  H01L27/14627

    摘要： An image sensor improving the uniformity of effective incident light. In one example, the size of microlenses disposed in different regions of the image sensor is changed to balance the brightness in different regions, in which the size of each microlens is a function of the distance between the microlens to the chip center In another example, the distance between the center of the microlens and the center of the corresponding sensing area is changed to balance the brightness in different regions and the corresponding color filters are shifted such that the microlens is overlying a corresponding color filter unit without overlying adjacent regions thereof, in which the distance between the center of the microlens and the center of the corresponding sensing area is a function of the distance between the corresponding sensing area to the chip center.

    摘要翻译： 一种改善有效入射光均匀性的图像传感器。 在一个示例中，设置在图像传感器的不同区域中的微透镜的尺寸被改变以平衡不同区域中的亮度，其中每个微透镜的尺寸是微透镜与芯片中心之间的距离的函数。在另一示例中， 改变微透镜的中心与相应感测区域的中心之间的距离，以平衡不同区域中的亮度，并且相应的滤色器被移位，使得微透镜覆盖相应的滤色器单元而不覆盖其相邻区域， 其中微透镜的中心与相应感测区域的中心之间的距离是与芯片中心的相应感测区域之间的距离的函数。

    CMOS image sensor
    5.
    发明授权
    CMOS image sensor 有权
    CMOS图像传感器

    公开(公告)号：US07508084B2

    公开(公告)日：2009-03-24

    申请号：US11253956

    申请日：2005-10-19

    申请人： Hung-Jen Hsu ,  Fu-Tien Wong

    发明人： Hung-Jen Hsu ,  Fu-Tien Wong

    IPC分类号： H01L23/544 ,  H01L21/76 ,  H01L21/00

    CPC分类号： H01L27/14632 ,  H01L27/14627 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  Y10S438/975

    摘要： A method for forming an image sensor device. An alignment mark is formed on or in a substrate with distance from the alignment mark to the substrate edge less than about 3 mm. An array of active photosensing pixels is formed on the substrate. At least one dielectric layer is formed covering the substrate and the array. A color filter photoresist is formed on the least one dielectric layer. Subsequent to removal of the color filter photoresist from the alignment mark, the color filter photoresist is exposed with alignment to the alignment mark.

    摘要翻译： 一种用于形成图像传感器装置的方法。 在距离对准标记至基板边缘的距离小于约3mm的基板上或基板上形成对准标记。 在衬底上形成有活性感光像素阵列。 形成覆盖基板和阵列的至少一个电介质层。 在至少一个电介质层上形成滤色器光致抗蚀剂。 在从对准标记移除滤色器光致抗蚀剂之后，将滤色器光致抗蚀剂与对准标记对齐地曝光。

    Effective method to improve sub-micron color filter sensitivity
    6.
    发明授权
    Effective method to improve sub-micron color filter sensitivity 有权
    提高亚微米滤色片灵敏度的有效方法

    公开(公告)号：US07372497B2

    公开(公告)日：2008-05-13

    申请号：US10833565

    申请日：2004-04-28

    申请人： Fu-Tien Weng ,  Yu-Kung Hsiao ,  Chin-Kung Chang ,  Hung-Jen Hsu ,  Yi-Ming Dai ,  Chin-Chen Kuo

    发明人： Fu-Tien Weng ,  Yu-Kung Hsiao ,  Chin-Kung Chang ,  Hung-Jen Hsu ,  Yi-Ming Dai ,  Chin-Chen Kuo

    IPC分类号： H04N5/225

    CPC分类号： H01L27/14685 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627

    摘要： An image sensor device and method for forming said device are described. The image sensor structure comprises a substrate with photodiodes, an interconnect structure formed on the substrate, a color filter layer above the interconnect structure, a first microlens array, an overcoat layer, and a second microlens array. A key feature is that a second microlens has a larger radius of curvature than a first microlens. Additionally, each first microlens and second microlens is a flat convex lens. Thus, a thicker second microlens with a short focal length is aligned above a thinner first microlens having a long focal length. A light column that includes a first microlens, a second microlens and a color filter region is formed above each photodiode. A second embodiment involves replacing a second microlens in each light column with a plurality of smaller second microlenses that focus light onto a first microlens.

    摘要翻译： 描述了用于形成所述装置的图像传感器装置和方法。 图像传感器结构包括具有光电二极管的衬底，形成在衬底上的互连结构，在互连结构上方的滤色器层，第一微透镜阵列，外涂层和第二微透镜阵列。 一个关键特征是第二微透镜具有比第一微透镜更大的曲率半径。 另外，每个第一微透镜和第二微透镜是平凸透镜。 因此，具有短焦距的较厚的第二微透镜在具有长焦距的较薄的第一微透镜上对准。 在每个光电二极管上方形成包括第一微透镜，第二微透镜和滤色器区域的光柱。 第二实施例涉及用多个将光聚焦到第一微透镜上的多个较小的第二微透镜替换每个光柱中的第二微透镜。

    Method to improve passivation openings by reflow of photoresist to eliminate tape residue
    8.
    发明授权
    Method to improve passivation openings by reflow of photoresist to eliminate tape residue 失效
    通过光刻胶回流来改善钝化开口以消除胶带残留的方法

    公开(公告)号：US06878642B1

    公开(公告)日：2005-04-12

    申请号：US09679514

    申请日：2000-10-06

    申请人： Hung-Jen Hsu ,  Yu-Kung Hsiao ,  Chih-Kung Chang ,  Sheng-Liang Pan ,  Kuo-Liang Lu

    发明人： Hung-Jen Hsu ,  Yu-Kung Hsiao ,  Chih-Kung Chang ,  Sheng-Liang Pan ,  Kuo-Liang Lu

    IPC分类号： H01L21/311 ,  H01L21/31

    CPC分类号： H01L21/31116 ,  H01L23/3171 ,  H01L2224/11472

    摘要： A new method to form passivation openings in the manufacture of an integrated circuit device is achieved. The passivation openings have gradually sloping sidewalls that allow a protective tape to be completely removed without leaving adhesive residue. A semiconductor substrate is provided. A passivation layer is deposited. An organic photoresist layer is deposited overlying the passivation layer. The organic photoresist layer is patterned to expose the passivation layer in areas where passivation openings are planned. The organic photoresist layer is reflowed to create gradually sloping sidewalls on the organic photoresist layer. The passivation layer is etched through to from the passivation openings. The passivation openings are thereby formed with gradually sloping sidewalls. The organic photoresist layer is stripped away. A protective tape is applied overlying the passivation layer and the passivation openings. The protective tape is removed. The gradually sloping sidewalls on the passivation openings allow the protective tape to be completely removed without leaving adhesive residue in the manufacture of the integrated circuit device.

    摘要翻译： 实现了在制造集成电路器件中形成钝化开口的新方法。 钝化开口具有逐渐倾斜的侧壁，其允许完全去除保护带而不留下粘合剂残留物。 提供半导体衬底。 沉积钝化层。 沉积在钝化层上的有机光致抗蚀剂层。 有机光致抗蚀剂层被图案化以在钝化开口被计划的区域中露出钝化层。 有机光致抗蚀剂层被回流以在有机光致抗蚀剂层上产生逐渐倾斜的侧壁。 从钝化开口蚀刻钝化层。 因此钝化开口由逐渐倾斜的侧壁形成。 剥离有机光致抗蚀剂层。 施加保护带覆盖钝化层和钝化开口。 取下保护胶带。 钝化开口上逐渐倾斜的侧壁允许保护带被完全去除，而不会在集成电路器件的制造中留下残留粘合剂。